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EPSRC National Epitaxy Facility enabling semiconductor research in the UK

Dates:17 May 2023
Times:12:00 - 12:00
What is it:Seminar
Organiser:Photon Science Institute
Who is it for:University staff, Current University students
Speaker:Zofia Bishop
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  • Photon Science Institute

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  • In category "Seminar"
  • By Photon Science Institute

Join us for this PSI seminar with guest speaker Zofia Bishop. The EPSRC National Epitaxy Facility (NEF) is a Centre-of-Excellence for semiconductor epitaxy in the UK, established for more than 40 years. The Facility currently supports research grants in excess of £150m in over 25 UK universities and works with the UK semiconductor industry. The Facility is a consortium of the Universities of Sheffield, Cambridge, and University College London and is home to 11 state-of-the-art epitaxial reactors, as well as a wide range of semiconductor characterization equipment. We specialise in the growth of III-V materials, group IV and hybrid group III-V/IV. We support researchers applying for funding, those with current grants, as well as those working in industry by offering advice in wafer structure design and undertaking the growth development required to deliver custom-designed wafers to our users. NEF supplies epitaxy to both long-term projects requiring hundreds of wafers over several years, and one-off requests. Our Pump Priming scheme allows researchers to conduct feasibility studies in support of grant applications. Through our new partnerships we offer epitaxy of emerging materials beyond the current III-V/IV provision. We are also expanding our capabilities into the field of heterogeneous integration with a new commercial Micro Transfer Print tool. The Facility has conducted pioneering research for over 40 years, including in quantum dots, which has enabled them to be used in quantum technology applications. Other examples include being the first in the world to produce mid-infrared quantum cascade lasers by MOVPE, enabling them to be used in industrial applications, pioneering growth of III-V lasers on silicon, and most recently developing porous GaN technology, which could be used in virtual-reality displays.

Speaker

Zofia Bishop

Organisation: University of Sheffield

Biography: The EPSRC National Epitaxy Facility (NEF) is a Centre-of-Excellence for semiconductor epitaxy in the UK, established for more than 40 years. The Facility currently supports research grants in excess of £150m in over 25 UK universities and works with the UK semiconductor industry.

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Jonathan Rodd

jonathan.rodd@manchester.ac.uk

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