BEGIN:VCALENDAR
PRODID:-//Columba Systems Ltd//NONSGML CPNG/SpringViewer/ICal Output/3.3-
 M3//EN
VERSION:2.0
CALSCALE:GREGORIAN
METHOD:PUBLISH
BEGIN:VEVENT
DTSTAMP:20240124T103603Z
DTSTART:20240124T130000Z
DTEND:20240124T140000Z
SUMMARY:ScN/GaN(1-100): a new platform for the epitaxy of twin-free metal
 -semiconductor heterostructures 
UID:{http://www.columbasystems.com/customers/uom/gpp/eventid/}r2no-lrrngn
 6h-ow64it
DESCRIPTION:Join us for this PSI seminar with guest speaker Dr. Philipp J
 ohn. Dr. John studies the molecular beam epitaxy of rock-salt ScN on the
  wurtzite GaN(1-100) surface. To this end\, ScN is grown on free-standin
 g GaN(1-100) substrates and self-assembled GaN nanowires that exhibit (1
 -100) sidewalls. On both substrates\, ScN crystallizes twin-free thanks 
 to a specific epitaxial relationship\, namely ScN(110)[001]||GaN(1-100)[
 000-1]\, providing a congruent\, low-symmetry GaN/ScN interface. The 13.
 1% uniaxial lattice mismatch occurring in this orientation mostly relaxe
 s within the first few monolayers of growth by forming a coincidence sit
 e lattice\, where 7 GaN planes coincide with 8 ScN planes\, leaving the 
 ScN surface nearly free of extended defects. Overgrowth of the ScN with 
 GaN leads to a kinetic stabilization of the zinc blende phase\, that rap
 idly develops wurtzite inclusions nucleating on {111} nanofacets\, commo
 nly observed during zinc blende GaN growth. Our ScN/GaN(1-100) platform 
 opens a new route for the epitaxy of twin-free metal-semiconductor heter
 ostructures made of closely lattice-matched GaN\, ScN\, HfN and ZrN comp
 ounds. \n\n\n\n
STATUS:TENTATIVE
TRANSP:TRANSPARENT
CLASS:PUBLIC
LOCATION:This event will take place online
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