Prospects for B containing alloys for deep ultraviolet LEDs
Dates: | 1 November 2023 |
Times: | 15:00 - 16:00 |
What is it: | Seminar |
Organiser: | Department of Electrical and Electronic Engineering |
Who is it for: | University staff, External researchers, Current University students |
Speaker: | Prof Peter Parbrook |
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Join this EEE research seminar - Photonic, Quantum Materials and Devices series seminar event.
III-Nitride materials have had great success in providing optoelectronic devices in the blue-green and UVA spectral regions. These devices form the light engine for LED lightbulbs for example, as well as being used in large area displays in Stadia. However, despite a range of available bandgaps from 6 eV (approximately the boundary between UVC and the vacuum ultraviolet) to less than 1 eV (in the infrared), in other wavelength ranges such efficient light production remains to be achieved. This is particularly the case in shorter wavelength UVB and UVC devices. Such devices have application in a range of areas, including sterilization and phototherapy and diagnostics.
In this presentation we will discuss the applications for such devices, and the challenges that are currently being actively investigated in order to bring such devices to market. In particular we will discuss the potential (and difficulties involved) in using boron within the III-Nitride alloy matrix, for example in modifying the point at which the order of the valence band maxima in the material may occur, which can adversely affect the emission direction of the photons and hence the light extraction from the device. In addition to discussing the potential the first initial results from an LED using boron containing III-N quantum wells will be presented.
Speaker
Prof Peter Parbrook
Role: Professor if III-Nitride Materials and Devices
Organisation: Tyndall National Institute, School of Engieering University College Cork
Biography: Peter Parbrook is Professor of III-Nitride Materials and Devices at University College Cork, where he is Head of the Electrical and Electronic Engineering Discipline in the School of Engineering, and Head of Research Group within the Tyndall National Institute. He has over 30 years experience in wide bandgap semiconductors research, originally in II-VI semiconductors, before moving to III-N materials. He was responsible for the III-N growth activity in the National Centre for III-V technologies at Sheffield University before taking an SFI funded chair in Ireland, working on the growth and fabrication of wide bandgap optoelectronic devices. His research has focused on understanding of the highly mismatched alloys and their application in the UV in particular, with additional research in III-N based nanotechnology.
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Alan Turing Building
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