Nano-engineering of III-nitride materials via wafer-scale nanopatterning
|Dates:||16 March 2022|
|Times:||13:00 - 14:00|
|What is it:||Seminar|
|Organiser:||Photon Science Institute|
|Who is it for:||University staff, Current University students|
|Speaker:||Dr. Philip Shields|
Join us for this PSI seminar with guest speaker Dr Philip Shields. Nano-engineering III-nitride semiconductors offers a route to further control their optoelectronic properties, enabling novel functionalities and applications. Although a variety of lithography techniques are currently employed to nano-engineer these materials, the scalability and cost of the fabrication process can be an obstacle for large-scale manufacturing.
In this talk I will describe a fast, robust and flexible emerging patterning technique called Displacement Talbot lithography (DTL), to successfully nano-engineer III-nitride materials. DTL, along with our extension of D2TL, allow the fabrication of a variety of periodic nanopatterns with a broad range of filling factors such as nanoholes, nanodots, nanorings and nanolines; all these features being achievable from one single mask.
To illustrate the possibilities opened by DTL/D2TL, dielectric and metal masks with a number of nanopatterns have been generated, allowing for the selective area growth of InGaN/GaN core-shell nanorods, the top-down plasma etching of III-nitride nanostructures, the top-down sublimation of GaN nanostructures, the hybrid top-down/bottom-up growth of AlN nanorods and GaN nanotubes, and the fabrication of nanopatterned sapphire substrates for AlN growth. Compared with their planar counterparts, these 3D nanostructures enable the reduction or filtering of structural defects and/or the enhancement of the light extraction, therefore improving the efficiency of the final device. Our most recent work aims to use nanostructures to target emission in the far-UVC region of the spectrum to combat viruses and anti-microbial resistance.
Dr. Philip Shields
Organisation: University of Bath
Biography: Dr Philip Shields was awarded his MPhys (1997) and DPhil (2001) degrees from the University of Oxford, before carrying out a series of post docs in Oxford and in Bath. In 2012 he became a Lecturer in the Department of Electronic & Electrical Engineering at the University of Bath and is now a Senior Lecturer. His research covers the growth and properties of semiconductor materials and their nanostructures and their fabrication into light-emitting devices. More recently he has been developing the lithography and nanofabrication techniques to create semiconductor nanostructures at the wafer scale. He works closely with a number of UK and European collaborators who have complementary expertise and interests.
Travel and Contact Information
This event will take place online